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 HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z (Previous: ADE-208-124) Rev.1.00 Mar.11.2004
Features
* Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. * Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application. * Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. HZS-N Series Mark Type No. Package Code MHD
Pin Arrangement
1
Type No. Cathode band 1. Cathode 2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
2
7.5
B
2
HZS-N Series
Absolute Maximum Ratings
(Ta = 25C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 -55 to +175 Unit mW C C
Electrical Characteristics
(Ta = 25C) Zener Voltage VZ (V)* Type HZS2.0N HZS2.2N HZS2.4N HZS2.7N HZS3.0N HZS3.3N HZS3.6N HZS3.9N HZS4.3N Grade B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 Min 1.88 2.02 2.12 2.22 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.47 3.62 3.77 3.92 4.05 4.20 4.34 4.47 4.59 4.71 4.85 4.97 5.12 5.29 5.46 5.64 5.81 5.99 6.16 6.32 6.52 6.70
1
Test Condition Max 2.10 2.20 2.30 2.41 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.68 3.83 3.98 4.14 42.6 4.40 4.53 4.65 4.77 4.91 5.03 5.18 5.35 5.52 5.70 5.88 6.06 6.24 6.40 6.59 6.79 6.97 IZ (mA) 5 5 5 5 5 5 5 5 5
Reverse Current Test IR (A) Condition Max 120 120 120 100 50 20 10 5 5 VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Dynamic Resistance Test rd () Condition Max 100 100 100 110 120 120 120 120 120 IZ (mA) 5 5 5 5 5 5 5 5 5
HZS4.7N
5
5
1.0
100
5
HZS5.1N
5
5
1.5
70
5
HZS5.6N
5
5
2.5
40
5
HZS6.2N
5
5
3.0
30
5
HZS6.8N
5
2
3.5
25
5
Note:
1. Tested with pulse (PW = 40 ms)
Rev.1.00, Mar.11.2004, page 2 of 6
HZS-N Series
(Ta = 25C) Zener Voltage VZ (V)* Type HZS7.5N Grade B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B4 B1 B2 B3 B4 B1 B2 B3 B4 Min 6.88 7.11 7.33 7.56 7.82 8.07 8.33 8.61 8.89 9.19 9.48 9.82 10.18 10.50 10.82 11.13 11.50 11.80 12.18 12.59 13.03 13.48 13.95 14.42 14.87 15.33 15.79 16.34 16.90 17.51 18.14 18.80 19.52 20.23 20.76 21.22 21.68 22.26 22.75 23.29 23.81 24.26 24.97 25.63 26.29
1
Test Condition Max 7.19 7.41 7.64 7.90 8.15 8.41 8.70 8.99 9.29 9.59 9.90 10.30 10.63 10.95 11.26 11.63 11.92 12.30 12.71 13.16 13.62 14.09 14.56 15.02 15.50 15.96 16.50 17.06 17.67 18.30 18.96 19.68 20.45 21.08 21.65 22.09 22.61 23.12 23.73 24.27 24.81 25.52 26.26 26.95 27.64 IZ (mA) 5
Reverse Current Test IR (A) Condition Max 0.5 VR (V) 4.0
Dynamic Resistance Test rd () Condition Max 25 IZ (mA) 5
HZS8.2N
5
0.5
5.0
20
5
HZS9.1N
5
0.5
6.0
20
5
HZS10N
5
0.2
7.0
20
5
HZS11N
5
0.2
8.0
20
5
HZS12N
5
0.2
9.0
25
5
HZS13N
5
0.2
10
25
5
HZS15N
5
0.2
11
25
5
HZS16N
5
0.2
12
25
5
HZS18N
5
0.2
13
30
5
HZS20N
5
0.2
15
30
5
HZS22N
5
0.2
17
30
5
HZS24N
5
0.2
19
35
5
HZS27N
5
0.2
21
45
5
Note:
1. Tested with pulse (PW = 40 ms)
Rev.1.00, Mar.11.2004, page 3 of 6
HZS-N Series
(Ta = 25C) Zener Voltage VZ (V)* Type HZS30N Grade B1 B2 B3 HZS33N B4 B1 B2 B3 HZS36N B4 B1 B2 B3 HZS39N B4 B1 B2 B3 B4 Min 26.99 27.70 28.36 29.02 29.68 30.32 30.90 31.49 32.14 32.79 33.40 34.01 34.68 35.36 36.00 36.63
1
Reverse Current Test Condition IR (A) Max 0.2 Test Condition VR (V) 23
Dynamic Resistance rd () Max 55 Test Condition IZ (mA) 5
Max 28.39 29.13 29.82 30.51 31.22 31.88 32.50 33.11 33.79 34.49 35.13 35.77 36.47 37.19 37.85 38.52
IZ (mA) 5
5
0.2
25
65
5
5
0.2
27
75
5
5
0.2
30
85
5
Notes: 1. Tested with pulse (PW = 40 ms). 2. Type No. is as follows: HZS2.0NB1, HZS2.0NB2, *** HZS39NB4.
Rev.1.00, Mar.11.2004, page 4 of 6
HZS-N Series
Main Characteristic
HZS2.4N HZS3.0N HZS3.6N HZS4.3N HZS5.1N HZS6.2N HZS7.5N HZS8.2N HZS9.1N HZS10N HZS11N HZS12N HZS16N
10
HZS2.0N
HZS13N HZS15N
HZS18N
HZS20N
HZS24N
HZS27N
Zener Current IZ (mA)
4
2
0
0
HZS6.8N
6
HZS22N
4
8
12
16
20
24
28
HZS30N
HZS33N
32
HZS36N
36
HZS39N
8
40
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Zener Voltage Temperature Coefficient Z (mV/C)
Zener Voltage Temperature Coefficient Z (%/C)
0.10 0.08 0.06 0.04
mV/C %/C
50 40 30 20 10 0 -10 -20 -30 -40 0 5 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
500
l
2.5 mm 3 mm
Power Dissipation Pd (mW)
400
Printed circuit board 100 x 180 x 1.6t mm Material: paper phenol
0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10
300
l = 5 mm
200
l = 10 mm (Publication value)
100
0
0
50
100
150
200
Ambient Temperature Ta (C) Fig.3 Power Dissipation vs. Ambient Temperature
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.1.00, Mar.11.2004, page 5 of 6
HZS-N Series
Package Dimensions
As of January, 2003
Unit: mm
26.0 Min
2.4 Max
26.0 Min
0.4
2.0
Package Code JEDEC JEITA Mass (reference value)
MHD Conforms -- 0.084 g
Rev.1.00, Mar.11.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0


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